Urbana, Ill., Apr 03: In a groundbreaking advancement for materials science and next-generation electronics, researchers from The Grainger College of Engineering at the University of Illinois Urbana-Champaign have successfully created the first synthetic charged domain wall in a two-dimensional (2D) material—opening new pathways for neuromorphic computing and reconfigurable electronic systems.
The study, published in Advanced Materials, was led by Arend van der Zande and graduate researcher Shahriar Muhammad Nahid. Their work demonstrates a novel method of engineering highly conductive interfaces within 2D ferroelectric materials, a first-of-its-kind achievement in the field.
2D materials—known for their atomic-scale thickness and flexibility—are widely used in developing advanced memory systems and molecular electronics. Unlike traditional materials, they can be stacked like building blocks, enabling customizable structures. The team focused on indium selenide (α-In2Se3), a unique semiconductor that also exhibits ferroelectric properties.
During earlier observations, researchers including Pinshane Huang and graduate student Edmund Han identified naturally occurring charged domain walls—interfaces between regions of opposite electric polarization—in 2D crystals. Inspired by this, the team set out to engineer these structures intentionally.
“We realized that while charged domain walls have been known for decades in traditional materials, no one had explored how they could be created or utilized in 2D systems,” said van der Zande. “That realization became an ‘aha’ moment for our research.”
By stacking two ultrathin layers of indium selenide with opposite polarizations, the team generated a strong electric charge at the interface. This, in turn, attracted mobile electrons and formed a highly conductive channel with significantly lower resistance than previously observed structures. Notably, the system operates at room temperature and can function like a transistor by tuning electronic properties.
This innovation holds significant promise for the development of neuromorphic devices—systems designed to mimic the adaptive behavior of the human brain. The engineered charged domain walls combine high conductivity with precise controllability, overcoming limitations seen in existing technologies.
“We’ve essentially created a new class of ferroelectric interfaces that never existed before,” van der Zande added. “This gives us the ability to design materials with tunable electrical properties, enabling applications like multi-state memory and adaptive computing systems.”
The research team is now exploring the creation of memtransistors and evaluating their potential for neuromorphic computing, as well as experimenting with additional material combinations.
Contributors to the project also include Haiyue Dong, Nadya Mason, and Gillian Nolan.
The study was supported by the National Science Foundation through the university’s Materials Research Science and Engineering Center.
This breakthrough marks a significant step toward more efficient, adaptable, and scalable electronic systems, with far-reaching implications for computing, data storage, and advanced materials engineering.
